Publications before 2015:
E. Scavetta;R. Mazzoni;F. Mariani;R. G. Margutta;A. Bonfiglio;M. Demelas;S. Fiorilli;M. Marzocchi;B. Fraboni, Dopamine amperometric detection at a ferrocene clicked PEDOT:PSS coated electrode, «JOURNAL OF MATERIALS CHEMISTRY. B», 2014, 2, pp. 2861 - 2867 [Scientific article]
Bianchi Méndez;Katharina Lorenz;Beatrice Fraboni;Oliver Ambacher, Functional Nanowires: Synthesis, Characterization and Applications, Weinheim, Wiley-VCH-Verl., 2014, pp. 1 . [Editorship]
A. F. Basile;B. Fraboni, Numerical modeling of current-voltage characteristics to extract transport properties of organic semiconductors, «JOURNAL OF APPLIED PHYSICS», 2014, 116, pp. 194507 - 194513 [Scientific article]
D. Cavalcoli;B. Fraboni;G. Impellizzeri;L. Romano;E. Scavetta;M.G. Grimaldi, Optoelectronic properties of nanoporous Ge layers investigated by surface photovoltage spectroscopy, «MICROPOROUS AND MESOPOROUS MATERIALS», 2014, 196, pp. 175 - 178 [Scientific article]
Fraboni, B.; Ciavatti, A.; Basirico, L.; Fraleoni-Morgera, A., Organic semiconducting single crystals as solid-state sensors for ionizing radiation, «FARADAY DISCUSSIONS», 2014, 174, pp. 219 - 234 [Scientific article]
A. F. Basile;T. Cramer;A. Kyndiah;F. Biscarini;B. Fraboni, Trap densities and transport properties of pentacene metal-oxide-semiconductor transistors. I. Analytical modeling of time-dependent characteristics, «JOURNAL OF APPLIED PHYSICS», 2014, 115, pp. 244504 - 244510 [Scientific article]
A. F. Basile;A. Kyndiah;F. Biscarini;B. Fraboni, Trap densities and transport properties of pentacene metal–oxide–semiconductor transistors: II—Numerical modeling of dc characteristics, «JOURNAL OF APPLIED PHYSICS», 2014, 115, pp. 244505 - 244512 [Scientific article]
G. Naresh-Kumar;A. Vilalta-Clemente;S. Pandey;D. Skuridina;H. Behmenburg;P. Gamarra;G. Patriarche;I. Vickridge;M. A. di Forte-Poisson;P. Vogt;M. Kneissl;M. Morales;P. Ruterana;A. Cavallini;D. Cavalcoli;C. Giesen;M. Heuken;C. Trager-Cowan, Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors, «AIP ADVANCES», 2014, 4, pp. 127101 - 127113 [Scientific article]
A. Cavallini;B. Fraboni;A. Castaldini;L. Marchini;N. Zambelli;G. Benassi;A. Zappettini, Defect Characterization in Fully Encapsulated CdZnTe, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2013, 60, pp. 2870 - 2874 [Scientific article]
A. Cavallini;B. Fraboni, Electrical properties of point defects in cadmium zinc telluride, «JOURNAL OF CRYSTAL GROWTH», 2013, 379, pp. 41 - 54 [Scientific article]
E. Capria;L. Benevoli;A. Perucchi;B. Fraboni;M. Tessarolo;Stefano Lupi;A. Fraleoni-Morgera, Infrared Investigations of 4-Hydroxycyanobenzene Single Crystals, «JOURNAL OF PHYSICAL CHEMISTRY. A, MOLECULES, SPECTROSCOPY, KINETICS, ENVIRONMENT, & GENERAL THEORY», 2013, 117, pp. 6781 - 6788 [Scientific article]
E. Scavetta; A. Mignani; D. Tonelli; G. Impellizzeri; L. Romano; C. Bongiorno; B. Fraboni; M.G. Grimaldi, Nanoporous Ge coated by Au nanoparticles for electrochemical application, «ELECTROCHEMISTRY COMMUNICATIONS», 2013, 30, pp. 83 - 86 [Scientific article]
S. Pandey; D. Cavalcoli; A. Cavallini, Band bowing and Si donor levels in InGaN layers investigated by surface photo voltage spectroscopy, «APPLIED PHYSICS LETTERS», 2013, 102, pp. 142101 - 142105 [Scientific article]
Filippo Fabbri;Enzo Rotunno;Laura Lazzarini;Daniela Cavalcoli;Antonio Castaldini;Naoki Fukata;Keisuke Sato;Giancarlo Salviati;Anna Cavallini, Preparing the way for doping wurtzite silicon nanowires while retaining the phase, «NANO LETTERS», 2013, 13, pp. 5900 - 5906 [Scientific article]
A. Minj; D. Cavalcoli; A. Cavallini; P. Gamarra; M.A. di Forte Poisson, Strain distribution and defect analysis in III-nitrides by dynamical AFM analysis, «NANOTECHNOLOGY», 2013, 24, pp. 145701 - 145708 [Scientific article]
S Pandey; B. Fraboni; D. Cavalcoli; A. Minj; A.Cavallini, Current-voltage measurement of AlxIn1-xN/AlN/GaN heterostructures, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 986 - 988 [Scientific article]
L.Basiricò; P. Cosseddu; A. Scidà; B.Fraboni; G.G. Malliaras; A. Bonfiglio, Electrical characteristics of ink-jet printed, all-polymer electrochemical transistors, «ORGANIC ELECTRONICS», 2012, 13, pp. 244 - 247 [Scientific article]
S. Pandey; D. Cavalcoli; Minj; Fraboni; Cavallini;P.Gamarra; M. A. Poisson, Electronic transitions and fermi edge singularity in polar heterostructures studied by absorption and emission spectroscopy, «JOURNAL OF APPLIED PHYSICS», 2012, 112, pp. 123721 - 123726 [Scientific article]
J. Crocco; H. Bensalah; Q. Zheng; A. Castaldini; B. Fraboni; D. Cavalcoli; A. Cavallini; E. Dieguez, Influence of Dynamic Temperature Adjustments During Growth on the Material Properties of CZT Radiation Devices, «JOURNAL OF CRYSTAL GROWTH», 2012, 361, pp. 66 - 72 [Scientific article]
S. Pandey ; D. Cavalcoli ; A. Minj; B. Fraboni ; A. Cavallini ; |D. Skuridina ; P. Vogt; M Kneissl., Mobility-limiting mechanisms in polar semiconductor heterostructures, «ACTA MATERIALIA», 2012, 60, pp. 3176 - 3180 [Scientific article]
A. Minj; D. Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini; T. Brazzini; F. Calle, Nanocrack-induced leakage current in AlInN/AlN/GaN, «SCRIPTA MATERIALIA», 2012, 66, pp. 327 - 331 [Scientific article]
G.Impellizzeri; L.Romano; B.Fraboni; E. Scavetta; F.Ruffino; C.Bongiorno; V. Privitera; M.G.Grimaldi, Nanoporous Ge electrode as a template for nano-sized (<5 nm) Au aggregates, «NANOTECHNOLOGY», 2012, 23, pp. 395604 - 395615 [Scientific article]
Roberto Jakomin; Antonella Parisini; Luciano Tarricone; Massimo Longo; Beatrice Fraboni; Salvatore Vantaggio, On the electrical properties of Si-doped InGaP layers grown by low pressure - metalorganic vapour phase epitaxy, «THIN SOLID FILMS», 2012, 520, pp. 6619 - 6625 [Scientific article]
B Fraboni;; A.Ciavatti; F.Merlo; L. Pasquini; A.Cavallini; A. Quaranta; A. Bonfiglio; A.Fraleoni-Morgera, Organic Semiconducting Single Crystals as Next Generation of Low-Cost, Room-Temperature Electrical X-ray Detectors, «ADVANCED MATERIALS», 2012, 24, pp. 2289 - 2293 [Scientific article]
B.Fraboni; A.Scidà; A.Cavallini; S.Milita; P.Cosseddu; A.Bonfiglio; Y.Wang;M.Nastasi, Photocurrent spectroscopy of ion-implanted organic thin film transistors, «SYNTHETIC METALS», 2012, 161, pp. 2585 - 2587 [Scientific article]
A.Fraleoni-Morgera; M.Tessarolo; A.Perucchi; L.Baldassarre; S.Lupi; B Fraboni, Polarized Infrared Studies on Charge Transport in 4-Hydroxycyanobenzene Single Crystals, «JOURNAL OF PHYSICAL CHEMISTRY. C, NANOMATERIALS AND INTERFACES», 2012, 116, pp. 2563 - 2569 [Scientific article]
S. Pandey; D. Cavalcoli; B. Fraboni; A. Cavallini; T. Brazzini; F Calle, Role of surface trap states on two-dimensional electron gas density in InAlN/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2012, 100, pp. 152116 - 152120 [Scientific article]
J. Crocco; H. Bensalah; Q. Zheng; V. Corregidor; E. Avles; A. Castaldini; B. Fraboni; D. Cavalcoli; A. Cavallini; O. Vela; E. Dieguez, STUDY OF ASYMMETRIES OF CZT DEVICES INVESTIGATED USING PICTS, RBS, SPS, AND GAMMA RAY SPECTROSCOPIES, «JOURNAL OF APPLIED PHYSICS», 2012, 112, pp. 074503 - 074512 [Scientific article]
Franc J.; Belas E.; Bugar M.; Hlidek P; Grill R.; Yang G.; Cavallini A.; Fraboni B.; Castaldini A.; Assali S., Semi insulating CdTe:Cl after elimination of inclusions and precipitates by post grown annealing, «JOURNAL OF INSTRUMENTATION», 2012, 7, pp. 1 - 4 [Scientific article]
B. Fraboni; P.Cosseddu; Y.Q.Wang; R.K.Schulze; A.Cavallini; M.Nastasi; A.Bonfiglio, Stabilization of organic thin film transistors by ion implantation, «PHYSICA. B, CONDENSED MATTER», 2012, 407, pp. 3047 - 3051 [Scientific article]
S. Pandey; D. Cavalcoli; B. Fraboni; A.Cavallini, Surface photovoltage spectroscopy characterization of Al1-xInxN/AlN/GaN heterostructures, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 693 - 696 [Scientific article]
F. Fabbri; D.Cavalcoli; A. Cavallini, 4H-SiC band structure investigated by surface photovoltage spectroscopy, «ACTA MATERIALIA», 2012, 60, pp. 3350 - 3354 [Scientific article]
Anna Cavallini; Daniela Cavalcoli ; Laura Polenta, Advanced Characterization Techniques, in: PIZZINI S., Advanced Silicon Materials for Photovoltaic Applications, CHICHESTER, WEST SUSSEX, John Wiley & Sons, 2012, pp. 189 - 210 [Chapter or essay]
A. Minj; D.Cavalcoli; A.Cavallini, Investigation of the properties of In-related alloys by AFM, «PHYSICA STATUS SOLIDI. C», 2012, 9, pp. 982 - 985 [Scientific article]
A. Minj; D. Cavalcoli; A. Cavallini, Structural and local electrical properties of AlInN/AlN/GaN heterostructures, «PHYSICA. B, CONDENSED MATTER», 2012, 407, pp. 2838 - 2840 [Scientific article]
A. Minj; D.Cavalcoli; A.Cavallini, Thermionic emission from the 2DEG assisted by image-charge-induced barrier lowering in AlInN/AlN/GaN heterostructures, «NANOTECHNOLOGY», 2012, 23, pp. 115701 - 115707 [Scientific article]
B.Fraboni; P.Cosseddu; Y.Q. Wang; R.K. Schulze; Z.F. Di; A.Cavallini; M. Nastasi ; A.Bonfiglio, Aging control of organic thin film transistors via ion-implantation, «ORGANIC ELECTRONICS», 2011, 12, pp. 1552 - 1559 [Scientific article]
Orgiu E.; Locci S.; Fraboni B.; Scavetta E.; Lugli P.; Bonfiglio A., Analysis of the hysteresis in organic thin-film transistors with polymeric gate dielectric, «ORGANIC ELECTRONICS», 2011, 12(3), pp. 477 - 485 [Scientific article]
D.Cavalcoli; S. Pandey; B. Fraboni; A. Cavallini, Band gap shift in Al1−xInxN/AlN/GaN heterostructures studied by surface photovoltage spectroscopy, «APPLIED PHYSICS LETTERS», 2011, 98, pp. 142111 - 142114 [Scientific article]
B.Fraboni; F.Boscherini; P.Fochuk; A.Cavallini, Ge clustering effects in Ge doped CdTe: Electrical and structural properties, «JOURNAL OF APPLIED PHYSICS», 2011, 110, pp. 953706 - 953709 [Scientific article]
L.Basiricò; P.Cosseddu; B.Fraboni; A.Bonfiglio, Inkjet printing of transparent, flexible, organic transistors, «THIN SOLID FILMS», 2011, 520, pp. 1291 - 1295 [Scientific article]
G.Mattana; P.Cosseddu; B.Fraboni; G.Malliaras; J.Hinestroza;A.Bonfiglio, Organic Electronics on Natural Cotton Fibers, «ORGANIC ELECTRONICS», 2011, 12, pp. 2033 - 2037 [Scientific article]
S. Pandey; B Fraboni; D.Cavalcoli; A. Minj; A.Cavallini, Two-dimensional electron gas properties by current-voltage analyses of Al0.86In0.14N/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2011, 99, pp. 012111 - 012114 [Scientific article]
D. Cavalcoli; M. Rossi; A.Cavallini, Defect States in nc-Si:H investigated by surface photovoltage spectroscopy, «JOURNAL OF APPLIED PHYSICS», 2011, 109, pp. 053719 - 053725 [Scientific article]
A. Minj; D. Cavalcoli ; A. Cavallini, Defect investigation in Al0.87In0.13N/AlN/GaN heterostructures by scanning force microscopy methods, «JOURNAL OF PHYSICS. CONFERENCE SERIES», 2011, 326, pp. 012011 - 012017 [Scientific article]
B. Fraboni; R. DiPietro; A. Cavallini; P. Cosseddu; A. Bonfiglio; J.-O. Vogel; J.P. Rabe; N. Koch, Correlating photocurrent spectra and electrical transport parameters in organic field effect transistors, «ORGANIC ELECTRONICS», 2010, 11, pp. 273 - 278 [Scientific article]
A.Fraleoni-Morgera; L.Benevoli; B.Fraboni, Solution growth of single crystals of 4-hydroxycyanobenzene (4HCB) suitable for electronic applications, «JOURNAL OF CRYSTAL GROWTH», 2010, 312, pp. 3466 - 3470 [Scientific article]
B.Fraboni; A.Scidà; A.Cavallini; P.Cosseddu; A.Bonfiglio; S.Milita; M.Nastasi, Spectroscopic investigation of the semiconductor molecular packing in fully operational organic thin-film transistors, «APPLIED PHYSICS LETTERS», 2010, 96, pp. 163302 - 163304 [Scientific article]
B. Fraboni; A. Fraleoni-Morgera; A. Cavallini, Three-dimensional anisotropic density of states distribution and intrinsic-like mobility in organic single crystals, «ORGANIC ELECTRONICS», 2010, 11, pp. 10 - 15 [Scientific article]
G. Micard;G. Hahn; B. Terheiden; D. Chrastina; G.Isella;T. Moiseev; D. Cavalcoli; A. Cavallini; S. Binetti; M. Acciarri; A. Le Donne; M. Texier; B. Pichaud, Electrical and structural properties of p-type nanocrystalline silicon grown by LEPECVD for photovoltaic applications, «PHYSICA STATUS SOLIDI. C», 2010, 1, pp. 1 - 4 [Scientific article]
A Minj; D.Cavalcoli; A.Cavallini, Indium segregation in AlInN/AlN/GaN heterostructures, «APPLIED PHYSICS LETTERS», 2010, 97, pp. 132114 - 132117 [Scientific article]
D. Cavalcoli; A. Cavallini, Surface Photovoltage Spectroscopy. Method and Applications., «PHYSICA STATUS SOLIDI. C, CURRENT TOPICS IN SOLID STATE PHYSICS», 2010, 7, pp. 1293 - 1300 [Scientific article]
P. Cosseddu; J.-O. Vogel; B. Fraboni; J. P. Rabe; N. Koch; A. Bonfiglio, Continuous tuning of organic transistor operation from enhancement to depletion mode, «ADVANCED MATERIALS», 2009, 21, pp. 344 - 350 [Scientific article]
B. Fraboni; D. Cavalcoli; A. Cavallini; P. Fochuk, Electrical activity of deep traps in high resistivity CdTe: Spectroscopic characterization, «JOURNAL OF APPLIED PHYSICS», 2009, 105, pp. 73705 - 073705-6 [Scientific article]
B. Fraboni; R. DiPietro; A. Cavallini; P. Cosseddu; A. Bonfiglio; J.O. Vogel, Photocurrent studies of sexythiophene-based OFETs, «APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING», 2009, 95, pp. 37 - 41 [Scientific article]
Beatrice Fraboni; Cristina Femoni; Ivan Mencarelli; Leonardo Setti; Riccardo Di Pietro; Anna Cavallini; and Alessandro Fraleoni-Morgera, Solution-Grown, Macroscopic Organic Single Crystals Exhibiting Three-Dimensional Anisotropic Charge-Transport Properties, «ADVANCED MATERIALS», 2009, 21, pp. 1835 - 1839 [Scientific article]
B. Fraboni; L. Pasquini; A. Castaldini; A. Cavallini;P. Siffert, X-ray irradiation effects on the trapping properties of Cd1−xZnxTe detectors, «JOURNAL OF APPLIED PHYSICS», 2009, 106, pp. 93713 - 93716 [Scientific article]
D. Cavalcoli; M. Rossi.; A. Tomasi; A.Cavallini, Degeneracy and instability of nanocontacts between conductive tips and hydrogenated nanocrystalline Si surfaces in conductive atomic force microscopy, «NANOTECHNOLOGY», 2009, 20, pp. 045702 - 045708 [Scientific article]
B. Fraboni; R. DiPietro; A.Castaldini; A. Cavallini; A. Fraleoni Morgera; L. Setti; I. Mencarelli; C. Femoni, Anisotropic charge transport in organic single crystals based on dipolar molecules, «ORGANIC ELECTRONICS», 2008, 9, pp. 974 - 978 [Scientific article]
T. Cesca; A. Gasparotto;B. Fraboni, Electrical spectroscopy of high resistivity ion-implanted layers by current-voltage measurements, «APPLIED PHYSICS LETTERS», 2008, 93, pp. 102114 - 102116 [Scientific article]
Orgiu E.; Taki M.; Fraboni B.; Locci S.; Bonfiglio A., Investigation on different organic semiconductor/organic dielectric interfaces in pentacenebased thin-film transistors, «MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS», 2008, 1029, pp. 45 - 51 [Scientific article]
E. Orgiu; M.Taki; B. Fraboni; S. Locci; A.Bonfiglio, Looking into the Organic Semiconductor/Organic Dielectric Interface in Pentacene Thin film Transistors: Trapping Mechanisms Characterization and Correlation with Transistor Performances, «MATERIALS RESEARCH SOCIETY SYMPOSIA PROCEEDINGS», 2008, 1029, pp. 203 - 208 [Scientific article].
D Cavalcoli; B Fraboni; A Cavallini, Surface Photovoltage Spectroscopy Analyses of Cd1-x ZnxTe, «JOURNAL OF APPLIED PHYSICS», 2008, 103 (5), pp. 043713 - 043719 [Scientific article]
A. Cavallini; D. Cavalcoli, Nanostructures in Silicon Investigated by Atomic Force Microscopy and Surface Photovoltage Spectroscopy, «SCANNING», 2008, 30 Issue: 4, pp. 358 - 363 [Scientific article]
B.Fraboni; A.Castaldini; A.Cavallini; N.Auricchio; M.Bianconi, Charge collecting properties of proton irradiated CdTe detectors, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2007, 54, pp. 807 - 812 [Scientific article]
T.Cesca; A.Gasparotto; E.Piana; B.Fraboni, Deep level thermal evolution in Fe implanted InP, «JOURNAL OF APPLIED PHYSICS», 2007, 102, pp. 93711 - 93716 [Scientific article]
B.Fraboni; E.Piana; T.Cesca; A.Gasparotto; M.Longo; R.Jakomin; L.Tarricone, Deep levels controlling the electrical properties of Fe implanted InGaP/GaAs, «APPLIED PHYSICS LETTERS», 2007, 90, pp. 182106 - 182109 [Scientific article]
B.Fraboni; A.Cavallini; N.Auricchio; M.Bianconi, Deep traps induced by 700keV protons in CdTe and CdZnTe detectors, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2007, 54, pp. 828 - 833 [Scientific article]
B. Fraboni; T. Cesca; A. Gasparotto; G. Mattei; F. Boscherini; G.Impellizzeri; F.Priolo; R.Jakomin; M. Longo; L. Tarricone, Electrical and structural characterization of Fe implanted GaInP, «PHYSICA. B, CONDENSED MATTER», 2007, 401, pp. 278 - 283 [Scientific article]
T. Cesca; A. Verna; G. Mattei; A. Gasparotto; B. Fraboni; F.Boscherini; M.Longo; L.Tarricone, Local structure of Fe incorporated in GaInP layers by high temperature ion implantation, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2007, 257, pp. 332 - 337 [Scientific article]
A. Cavallini; A. Castaldini; D. Cavalcoli; B. Fraboni, Photocurrent and Surface Photovoltage Spectroscopy Investigations of CdTe-Based Compounds, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2007, 54, pp. 1719 - 1722 [Scientific article]
B.Fraboni; A.Castaldini; T.Cesca; A.Gasparotto; L.Tarricone, Spectroscopic characterization of the electrical properties of Fe implants on GaInP/GaAs, «JOURNAL OF APPLIED PHYSICS», 2007, 102, pp. 7311 - 7317 [Scientific article]
A. Cavallini; D. Cavalcoli; M. Rossi; A. Tomasi; S. Pizzini; D. Chrastina; G. Isella, Defect analysis of hydrogenated nanocrystalline Si thin films, «PHYSICA. B, CONDENSED MATTER», 2007, 401-402, pp. 519 - 522 [Scientific article]
D. Cavalcoli; A. Cavallini, Electronic states related to dislocations in silicon, «PHYSICA STATUS SOLIDI. C», 2007, 4, pp. 2871 - 2877 [Scientific article]
D.Cavalcoli;M.Rossi; A. Tomasi; A.Cavallini;D.Chrastina; G.Isella, Hydrogenated nanocrystalline silicon thin films studied by scanning force microscopy., «DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA», 2007, 131-133, pp. 547 - 552 [Scientific article]
D. Cavalcoli; A.Castaldini; A. Cavallini, Interaction between oxygen and dislocations in p-type silicon, «APPLIED PHYSICS. A, MATERIALS SCIENCE & PROCESSING», 2007, 90, pp. 619 - 622 [Scientific article]
T.Cesca; A. Gasparotto; A.Verna; B.Fraboni; G.Impellizzeri; F.Priolo; L.Tarricone; M.Longo, Incorporation of active Fe impurities in GaInP by high temperature ion implantation, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2006, 242, pp. 653 - 657 [Scientific article]
T. Cesca; A. Verna; G. Mattei; A. Gasparotto; B. Fraboni; G. Impellizzeri; F. Priolo, Ion Beam Analyses and electrical characterization of substitutional Fe properties in Fe implanted InP, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2006, 249, pp. 894 - 896 [Scientific article]
T.Cesca; A.Verna; G.Mattei; A.Gasparotto; B.Fraboni; G.Impellizzeri; F.Priolo, Mechanisms for the activation of ion-implanted Fe in InP, «JOURNAL OF APPLIED PHYSICS», 2006, 100, pp. 23539 - 23545 [Scientific article]
B.Fraboni; A.Matteucci; A.Cavallini; E.Orgiu; A.Bonfiglio, Near band-edge photocurrent analyses of pentacene thin films, «APPLIED PHYSICS LETTERS», 2006, 89, pp. 222112 - 222115 [Scientific article]
B.Fraboni; A.Cavallini; N.Auricchio; M.Zanarini; W.Dusi; P.Siffert, Time and thermal recovery of irradiated CdZnTe detectors, «SEMICONDUCTOR SCIENCE AND TECHNOLOGY», 2006, 21, pp. 1034 - 1039 [Scientific article]
D. Cavalcoli; A.Cavallini; M.Rossi; S.Pizzini, Micro- and nano-structures in silicon studied by DLTS and scanning probe methods, «SEMICONDUCTORS», 2006, 41, pp. 435 - 440 [Scientific article]
S.Pizzini; M.Acciarri; S.Binetti; D.Cavalcoli; A. Cavallini; L. Colombo; H. von Känel; K.Peter; B. Pichaud; G.Isella; D.Chrastina; A.LeDonne; M. Guzzi; A.Mattoni; M.Rossi; S.Sanguinetti; M. Texier, Nanocrystalline Silicon Films as Multifunctional Material for Optoelectronic and Photovoltaic Applications, «MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY», 2006, 134, pp. 118 - 124 [Scientific article]
D.Cavalcoli; A.Cavallini, On the Interaction of Dislocations with Impurities in Silicon, «DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART A, DEFECT AND DIFFUSION FORUM», 2006, 245-246, pp. 15 - 22 [Scientific article]
A.Cavallini; B.Fraboni; W.Dusi, Compensation processes in Cd-based compounds, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2005, 52, pp. 1960 - 1965 [Scientific article]
B.Fraboni; A.Gasparotto; T.Cesca; A. Verna; G.Impellizzeri; F.Priolo, Electrical activation of the Fe2+/3+ trap in Fe implanted InP, «APPLIED PHYSICS LETTERS», 2005, 87, pp. 252113 - 252116 [Scientific article]
B.Fraboni; A.Cavallini; N.Auricchio; M.Zanarini; W.Dusi; P.Siffert, Recovery of radiation damage in CdTe detectors, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2005, 52, pp. 1234 - 1239 [Scientific article]
A. Castaldini; D. Cavalcoli; A. Cavallini; S. Pizzini, Defect states in Czochalski p-type silicon: the role of oxygen and dislocations, «PHYSICA STATUS SOLIDI. A, APPLICATIONS AND MATERIALS SCIENCE», 2005, 202, pp. 889 - 895 [Scientific article]
A. CASTALDINI; CAVALCOLI D.; A. CAVALLINI; S. BINETTI; S. PIZZINI, Electronic transitions at defect states in Cz p-type silicon, «APPLIED PHYSICS LETTERS», 2005, 86, pp. 162109 - 162112 [Scientific article]
A. Castaldini; D. Cavalcoli; A. Cavallini; and S. Pizzini, Experimental Evidence of Dislocation Related Shallow States in p-Type Si, «PHYSICAL REVIEW LETTERS», 2005, 95, pp. 76401 - 76404 [Scientific article]
D.Cavalcoli; Giorgio Lulli, Fisica della Materia, in: Percorsi di Ricerca. La Fisica attraversa Bologna., BOLOGNA, Bononia University Press, 2005, pp. 65 - 76 (Grandi Opere) [Chapter or essay]
T.Cesca; A.Gasparotto; B.Fraboni; F.Priolo, Annealing behaviour of high temperature implanted Fe impurities in n- InP, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2004, 216, pp. 105 - 108 [Scientific article]
B.Fraboni; A.Cavallini; W.Dusi, Damage induced by ionizing radiation on CdZnTe and CdTe detectors, «IEEE TRANSACTIONS ON NUCLEAR SCIENCE», 2004, 51, pp. 1209 - 1214 [Scientific article]
A.Cavallini; B.Fraboni; F.Capotondi; L.Sorba; G.Biasiol, Deep levels in MBE grown AlGaAs/GaAs heterostructures, «MICROELECTRONIC ENGINEERING», 2004, 73, pp. 954 - 959 [Scientific article]
M.Zanarini; P.Chirco; W.Dusi; N.Auricchio; A.Cavallini; B.Fraboni; P.Siffert; M.Bianconi, Radiation damage induced by 2 MeV protons in CdTe and CdZnTe planar detectors, «NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH. SECTION B, BEAM INTERACTIONS WITH MATERIALS AND ATOMS», 2004, 213, pp. 315 - 319 [Scientific article]
F. Capotondi; G. Biasiol; I. Vobornik; F. Giazotto; L. Sorba; A. Cavallini; B. Fraboni, Two dimensional electron gas formation in undoped In0.75Ga0.25As/In0.75Al0.25As quantum well, «JOURNAL OF VACUUM SCIENCE & TECHNOLOGY. B», 2004, 22, pp. 702 - 706 [Scientific article]
D.Cavalcoli; A.Cavallini; M.Rossi; K.Peter, Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells, «DIFFUSION AND DEFECT DATA, SOLID STATE DATA. PART B, SOLID STATE PHENOMENA», 2004, 95-96, pp. 205 - 210 [Scientific article]
CAVALCOLI D.; A.CAVALLINI ; M. ROSSI, Mono and multi-crystalline Silicon characterization by Non-Contacting Techniques, «JOURNAL OF THE ELECTROCHEMICAL SOCIETY», 2004, 151, pp. G248 - G251 [Scientific article]
Cavalcoli, D.; Cavallini, A.; Rossi, M.; Binetti, S.; Izzia, F.; Pizzini, S., Surface contaminant detection in semiconductors using noncontacting techniques, «JOURNAL OF THE ELECTROCHEMICAL SOCIETY», 2004, 150, pp. G456 - G460 [Scientific article]
G. Ciatto, F.D'Acapito, B.Fraboni, F.Boscherini, N.El Habra, T.Cesca, A.Gasparotto, E.Moreira, F.Priolo “Local structure of iron implanted in Indium Posphide” Nucl.Instrum.Methods B 200, 100 (2003)
A.Cavallini, B.Fraboni, W.Dusi e M.Zanarini “Defective states induced in CdZnTe and CdTe detectors by high and low energy neutrons” J.Appl.Phys. 94 3135 (2003)
A .Gasparotto, T.Cesca, B.Fraboni, F.Priolo “Correlation among structural, electrical and deep level properties of Fe centers implanted in InP” Physica B 340-342, 403 (2003)
T.Cesca V. Rampazzo, G. Mattei, A. Gasparotto, B. Fraboni, F. Boscherini, F .Priolo, G.Ciatto, C.Bocchi “Atomic Environment of Fe in high temperature implanted InP” Phys.Rev. B 68 224113 (2003)
D. Cavalcoli, A.Cavallini, M.Rossi, S.Binetti, F.Izzia and S.Pizzini “Surface Contaminant Detection in Semiconductors Using Non-Contacting Techniques” Journal of The Electrochemical Society, 150 G456-G460 (2003).
D.Cavalcoli, A.Cavallini, M.Rossi and K Peter “Minority Carrier Diffusion Lengths in Multi-crystalline Silicon Wafers and Solar Cells”:Solid State Phenomena, Vol. 95- 96, p.205 (2003).
A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, M.Zanarini, P.Siffert “Behaviour of CdTe and CdZnTe detectors following electron irradiation” IEEE Trans. Nucl.Science 49, 1598 (2002)
A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, P.Chirco, M.Zanarini, P.Siffert, P.Fougeres “Radiation effects on II-VI compound based detectors” Nucl.Instru m.Methods A 476 770 (2002)
A.Cavallini, B.Fraboni, W.Dusi, N.Auricchio, M.Zanarini, P.Chirco “The time recovery of spectroscopic properties of CdZnTe and CdTe heavily irradiated detectors” Appl.Phys.A 75, 427 (2002)
A.Gasparotto, T.Cesca, N.El Habra, B.Fraboni, F.Boscherini, F.Priolo, E.C.Moreira, G.Ciatto, F.D'Acapito, G.Scamarcio “Implant and characterization of highly concentrated Fe deep centers in InP” Mat.Sci.Eng.B 91-92C 503 (2002)
Castaldini A., D.Cavalcoli, A.Cavallini, T Minarelli and E. Susi. “Characterisation of surface and near surface region in High Purity Cz Si” Sol State Phenomena Vols 82-84 (2002) pp 747-752.
A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface analyses of polycristalline and Cz Si wafers”, Solar Energy Materials & Solar Cells Vol 72 issues 1-4 pp 561-571 (2002)
A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi “Surface Photovoltage analysis of crystalline silicon for photovoltaic applications”, Solar Energy Materials & Solar Cells, Vol 72 issues 1-4 pp 427-434 (2002).
A.Castaldini, D.Cavalcoli, A.Cavallini and M.Rossi. “Scanning Kelvin Probe and Surface Photovoltage Analysis of Multicrystalline Silicon” Mat Sci and Eng B, 2002, Vol. 91-92 pp. 234-238.
A. Castaldini, D. Cavalcoli, A. Cavallini, E. Susi: “Hydrogen-induced boron passivation in CzSi” Appl Phys A 75 (2002) 5, 601-605.
A. Castaldini, D. Cavalcoli, A. Cavallini, D. Jones, V. Palermo, and E. Susi “Surface modifications in Si after RTA” Journal of the Electrochemical Society, 149 (12) (2002) G633-637.
A.Gasparotto, B.Fraboni, F.Priolo, F.Enrichi, A.Mazzone, G.Scamarcio, M.Troccoli, R.Mosca “Assessment of electrical and optical properties of heavily Fe-implanted InP” Mat.Sci.Eng.B 80 202 (2001)
B.Fraboni, A.Gasparotto, T.Cesca, F.Priolo, G.Scamarcio, A.Mazzone, M.Troccoli “High Fe solubility in InP by high temperature ion implantation” Nucl.Instr.Meth.B 178 275 (2001)
A.Mazzo ne, M.Troccoli, G.Scamarcio, B.Fraboni, F.Priolo, A.Gasparotto “Mid-ir (3.5µm) electroluminescence from heavily Fe2+ ion implanted semi-insulating InP” Optical Materials 17 189 (2001)
M.Troccoli, G.Scamarcio, B.Fraboni, F.Priolo, A.Gasparotto “Deep level electroluminescence at 3.5µm from semi-insulating InP layers ion implanted with Fe” Semicon.Sci.Technol. 16 L1 (2001)
A.Cavallini, B.Fraboni, N.Auricchio, E.Caroli, W.Dusi, P.Chirco, M.P.Morigi, M.Zanarini, M.Hage-Ali, P.Siffert “Irradiation induced defects in CdTe and CdZnTe detectors” Nucl.Instr.Meth. A 458 392 (2001)
A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini, M.Hage-Ali, P.Siffert “Defects introduced in cadmium telluride by gamma-irradiation” J.Appl.Phys. 89 55 (2001)
B.Fraboni, A.Gasparotto, F.Priolo, G.Scamarcio “High Fe2+/3+ trap concentration in heavily compensated implanted InP” Appl.Phys.A 73 35 (2001)
Susi E, Castaldini A., Cavalcoli D., and Cavallini A. “Surface Damage in Silicon Substrates after the SiCl4 Dry etch of a Poly-Si film Journal of the Electrochemical Society 148 (3) G150-155 (2001).
E.Susi, A.Castaldini, D.Cavalcoli, A.Cavallini D.Jones V.Palermo, and M.Cocchi: “Electrical and structural properties of processed silicon surfaces” in Recent Res. Devel. in Vacuum Sci. and Tech., Trans. Res. Network 3 (2001):189-2001
A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini “On the role of extended defects on the transport properties of Er-doped silicon” Phil.Mag.B 80 571 (2000)
A.Cavallini, B.Fraboni, P.Chirco, M.P.Morigi, M.Zanarini, W.Dusi, N.Auricchio, E.Caroli. P.Fougeres, M.Hage-Ali, P.Siffert “Electronic properties of traps induced by gamma-irradiation in CdTe and CdZnTe detectors” Nucl.Instr.Meth. A 448 558 (2000)
A.Castaldini, A.Cavallini, B.Fraboni, S.Pizzini “Charge collection mapping of the back-transfer process in Er-doped silicon” Appl.Phys.Lett. 76 3585 (2000)
A.Cavallini, B.Fraboni, W.Dusi, M.Zanarini, P.Siffert “Deep levels and compensation in gamma-irradiated CdZnTe” Appl.Phys.Lett. 77, 3212 (2000)
P.Chirco, E.Caroli, A.Cavallini, W.Dusi, B.Fraboni, M.Hage-Ali, M.P.Morigi, P.Siffert, M.Zanarini “CdTe detectors' response to irradiation with high-energy gamma-rays” IEEE Trans.Nucl.Sci. 47 2078 (2000)
Castaldini A., D.Cavalcoli, A.Cavallini “Determination of bulk and surface transport properties by photocurrent spectral measurements” Appl. Physics A 71, 305-310, (2000).
A.Cavallini, B.Fraboni, S.Pizzini, S.Binetti, S.Sanguinetti, L.Lazzarini, G.Salviati “Electrical and optical characterization of Er-doped silicon grown by liquid phase epitaxy” J.Appl.Phys. 85 1582 (1999)
A.Gasparotto, A.Carnera, C. Frigeri, F.Priolo, B.Fraboni, A.Camporese, G.Rossetto “Interaction between Fe, dopants and secondary defects in MeV Fe ion implanted InP” J.Appl.Phys. 85 753 (1999)
A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini, L.Lazzarini, G.Salviati "Electrical and optical analyses of Er-doped silicon grown by Liquid Phase Epitaxy", Journal of Luminescence 80 347 (1999)
S.Binetti, A.Cavallini, A.Dellafiore, B.Fraboni, E.Grilli, M.Guzzi, S.Pizzini, S.Sanguinetti "Erbium doped epilayers grown by LPE", Journal of Luminescence 80 343 (1999)
A.Cavallini, B.Fraboni, S.Binetti, S.Pizzini, L.Lazzarini, G.Salviati "On the influence of dislocations on the luminescence of Si:Er" phys.stat.sol.(a) 171 347 (1999)
C.Frigeri, A.Carnera,A.Gasparotto, B.Fraboni, F.Priolo, A.Camporese, G.Rossetto “Gettering of Fe at the end of range loops and twin band interfaces in Fe-implanted InP” phys.stat.sol.(a) 171 209 (1999)
A.Gasparotto, A.Carnera, A.Paccagnella, B.Fraboni, F.Priolo, E.Gombia, R.Mosca, G.Rossetto “Semi-insulating behaviour of Fe MeV implanted n-type InP” in Nucl.Instr.Meth.B 148 411 (1999)
S.Binetti, S.Pizzini, A.Cavallini, B.Fraboni “Erbium doped silicon epilayers grown by liquid phase epitaxy” Semiconductors 33 596 (1999)
A.Gasparotto, A.Carnera, A.Paccagnella, B.Fraboni, F.Priolo, E.Gombia, R.Mosca “High resistance buried layers by MeV Fe implantation in n-type InP” Appl.Phys.Lett. 75 668 (1999)
A.Castaldini, D.Cavalcoli, A. Cavallini, S Pizzini, and E.Susi “Electrical Characterization of As-grown and Thermally treated 8” Silicon Wafers” Solid State Phenomena 69-70 (1999) 143-148.
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras, "Deep energy levels in CdTe and CdZnTe" J.Appl.Phys. 83 2121 (1998)
A.Cavallini, B.Fraboni and S.Pizzini, "Deep levels in Er doped silicon", Appl.Phys.Lett. 72 468 (1998)
A.Castaldini, D Cavalcoli and A.Cavallini; "Degradation Effects at Aluminum- Silicon Schottky Diodes" Electrochem. Solid-State Lett. 1, 83 (1998).
C.Frigeri, A.Carnera, B.Fraboni, A.Gasparotto,A.Cassa, F.Priolo, A.Camporese, G.Rossetto "Defect characterization in InP substrates implanted with 2MeV Fe ions", Mat.Sci.Eng.B44 193 (1997)
S.Pizzini, M.Donghi, S.Binetti, I.Gelmi, A.Cavallini, B.Fraboni and G.Wagner: "Influence of the host composition on the equilibrium structure of Er-centres in silicon", Solid St.Phenom. 54 86 (1997)
S.Binetti, M.Donghi, S.Pizzini, A.Castaldini, A.Cavallini, B.Fraboni, N.Sobolev "Erbium in Silicon:problems and challenges", Solid St.Phenom. 57-58 197 (1997)
D.Cavalcoli, A.Cavallini and E. Gombia “Defect states in plastically deformed n-type silicon”. Phys. Rev. B 56 (16) (1997) 10208.
D.Cavalcoli, A.Cavallini and E. Gombia "Anomalous temperature dependence of deep level transient spectroscopy peak amplitude" Phys. Rev. B 56 (23) (1997) 14890-14892.
D.Cavalcoli, A.Cavallini and E. Gombia "Energy Levels Associated with extended defects in plastically deformed n-type Silicon" J. Phys III France 7 (1997) 1399- 1409.
D.Cavalcoli, A.Cavallini and E. Gombia "Thermal behaviour of deep levels at dislocations in n-type silicon" J. Phys. III France 7 (1997) 2361-2366.
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras and L.Polenta "Cathodoluminescence and photo-induced current spectroscopy studies of defects in Cd0.8Zn0.2Te", Phys.Rev.B 54 1122 (1996)
A.Castaldini, A.Cavallini, B.Fraboni, J.Piqueras and L.Polenta "Comparison of electrical and luminescence data for A-center in CdTe" Appl.Phys.Lett. 69 3510 (1996)
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras and L.Polenta "Compensation and deep levels in II-VI compounds" Mat.Sci.Eng.B42 302 (1996)
A.Castaldini, A.Cavallini, B.Fraboni, P.Fernandez, J.Piqueras, "Midgap traps related to compensation processes in CdTe alloys" Phys.Rev.B 56 14897 (1997)
A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez and J.Piqueras: "Shallow donor and deep level density: influence on the diffusion length in GaAs:Te wafers", Il Vuoto, Scienza e Tecnologia, 3 176 (1995)
A.Castaldini, A.Cavallini, B.Fraboni and J.Piqueras "The EL2 trap in highly doped GaAs:Te", J.Appl.Phys. 78 1089 (1995)
D.Cavalcoli, G.Matteucci and M.Muccini: "Simulation of electron holographic contour maps of linear charged dislocations" Ultramicroscopy, 57 (1995) 385-390.
D.Cavalcoli, A.Cavallini, C.Capperdoni, D.Palmeri and G. Martinelli: "On the Electrical Activity of First and Second Order Twin Boundaries in Silicon" Semicond. Sci. and Technol. 10 (1995) 660-665.
A.Castaldini, D.Cavalcoli, A.Cavallini, G.Martinelli, D.Palmeri, A.Parisini and G. Sartori: "Analysis of ∑ =3 and ∑= 9 Twin Boundaries in Three - Crystal Silicon Ingots" Solid State Phenomena 47-48 Scitec Pubblications (1995) 455-460
B.Mendez, J.Piqueras, A.Cavallini and B.Fraboni: "Study of defects in implanted GaAs:Te by cathodoluminescence" Mat. Sci. Eng. B24 138 (1994)
A.Castaldini, A.Cavallini, B.Fraboni, B.Mendez, and J.Piqueras: "Spatial distribution of recombination centres in GaAs:Te. Effects of the doping level" J.Appl.Phys. 76 987 (1994)
D.Cavalcoli, A.Cavallini and B.Fraboni: "The injection dose effect on the evaluation of bulk and surface parameters in semiconductors" Phil.Mag. B 70 1095 (1994)
A.Castaldini, A.Cavallini, B.Fraboni and J. Piqueras: "Junction spectroscopy of highly doped GaAs : detection of the EL2 trap" Mat. Sci. Eng. B25 960 (1994)
D.Cavalcoli and A.Cavallini: "Evaluation of Diffusion Length at Different Excess Carrier Concentration" Mat Sci and Engineering B24 (1994), 98-100.
A.Castaldini, A.Cavallini, B.Fraboni and E.Giannotte: "Effects of diffusion-induced defects on carrier lifetime", Appl.Surf.Sci. 63, p.301 (1993)
S.Blythe, B.Fraboni, S.Lall, H.Ahmed and U. De Riu: "Layout reconstruction of complex silicon chips", IEEE Solid State Circuits 28, p.138 (1993)
D.Cavalcoli, A.Cavallini, E.Gombia and M.Reiche: "Properties of Dislocations and Point Defects in Fz-Si” Solid State Phenomena Scitec Publ. 32-33 (1993) 319 -324.
A.Cavallini, B.Fraboni and D.Cavalcoli: "Evaluation of diffusion length and surface recombination velocity in semiconductor devices by the method of moments", J.Appl.Phys. 71, p.5964, (1992).
A.Castaldini, A.Cavallini, B.Fraboni and E.Giannotte: "Role of impurities on diffusion-induced defective states", J. Appl. Phys. 72, p.1622 (1992)
D. Cavalcoli, A.Cavallini and A.Castaldini: "Determination of Minority Carrier Diffusion Length by Integral Properties of Electron Beam Induced Current Profiles" J. Appl. Phys., 70 (4) (1991). 2163-2168.
A.Castaldini, D.Cavalcoli and A. Cavallini: "Investigation of Electrical Contacts on n- type Si" Solid State Phenomena 19-20, Sci-Tec.Publ. (1991) 529-534.
A.Castaldini, D.Cavalcoli and A.Cavallini: "Processing Effects on the Electrical Properties of Defects in Silicon" Material Science and Engineering B4 (1989), p. 343- 346.
A.Castaldini, D.Cavalcoli and A.Cavallini: "Electronic States in Plastically Deformed Silicon" Solid State Phenomena 47-48, Sci. Tec. Publ. (1989) p. 211-220.
A.Mittiga, M.Capizzi, C.Coluzza, A.Frova, V.Parisi, D.Cavalcoli, L.Moro, M. Prudenziati. "Oblique Grain Boundaries: Analysis of LBIC and EBIC Profiles" J. Appl. Phys. 63 (9) (1988), p. 4748.