This is a relaxation technique for investigation of molecular mobility in the solid state with sensitivity comparable to DMA.
Materials: semiconductors, polymers, polymer-clay composites.
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Operating principle: Thermal detrapping of carriers from defects causes peaks in the leakage current at certain temperatures corresponding to specific trapping centers.
Sensitivity: Densities of electronically active traps as low as 109 cm−3 can easily be detected in high resistivity materials.
Facilities for adequate experimental setup: